Electron subband dispersions in ultra-thin silicon films from a two-band k·p theory
نویسندگان
چکیده
The electron subband structure in a thin (100) silicon film is analyzed based on a two-band k·p theory. For unprimed subbands the dependence of the nonparabolicity parameter on film thickness is obtained. The two-band k·p theory gives a thickness dependence of the effective masses for primed subbands. Limitations of the model are discussed. The importance of the nonparabolicity parameter dependence on the film thickness for transport is demonstrated.
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Article history: Received 17 March 2008 Received in revised form 28 April 2008 Accepted 13 June 2008 Available online 26 October 2008 The review of this paper was arranged by Dimitri Lederer and Jean-Pierre Colinge
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